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In this study, organic thin-film transistors with high-charge carrier mobility, high-on/off current ratio, low-operating voltage were fabricated using organic gate dielectrics on flexible plastic substrate. For this device, all elements besides metal electrodes are organic or polymeric. Electrical properties of gate dielectrics, PVP according to the photo-cross linker weight percent which was introduced to the PVP to initiate cross-linking were examined. From the device with 16 wt% of photo-cross linker, ammonium dichromate, the best charge mobility, 2.56 cm²/Vs, could be obtained. From these results, we showed a great possibility of using organic thin-film transistors fabricated on plastic substrates in ultra-low-cost electronic devices.
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